The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Nov. 24, 2012
Applicant:
Hitachi, Ltd., Tokyo, JP;
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 29/207 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 29/872 (2013.01); H01L 29/0692 (2013.01); H01L 29/66212 (2013.01); H01L 29/1608 (2013.01); H01L 29/207 (2013.01); H01L 29/2003 (2013.01); H01L 29/475 (2013.01);
Abstract
Disclosed is a high performance nitride semiconductor having a reverse leak current characteristic with two-dimensional electron gas as a conductive layer. A desired impurity is diffused into or a nitride semiconductor to which a desired impurity is added is re-grown on the bottom surface and the side face portion of a recessed portion formed by dry etching using chlorine gas on the upper surface of a nitride semiconductor stacked film to increase resistance of the side face portion of the nitride semiconductor stacked film contacting an anode electrode, reducing the reverse leak current.