The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Aug. 30, 2013
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Lam Lee, Pohang-si, KR;

Jae Ho Lee, Yongin-si, KR;

Yeo Jin Yoon, Ansan-si, KR;

Eu Jin Hwang, Siheung-si, KR;

Dae Won Kim, Seoul, KR;

Assignee:

Seoul Viosys Co., Ltd, Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/08 (2010.01); H01L 27/15 (2006.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/20 (2013.01); H01L 33/385 (2013.01); H01L 33/44 (2013.01); H01L 33/08 (2013.01); H01L 27/153 (2013.01);
Abstract

The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.


Find Patent Forward Citations

Loading…