The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Jan. 23, 2014
Applicant:

Chung-shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense, Taoyuan County, TW;

Inventors:

Wen-Chiung Su, Taoyuan County, TW;

Wei-Ho Ting, Taichung, TW;

Mao-Syong Lin, Taichung, TW;

Chia-Cheng Chang, Taichung, TW;

Hsin-Cheng Chiu, Taichung, TW;

Sheng-hong Dai, Taichung, TW;

Ru-Jong Jeng, Taichung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C08F 257/02 (2006.01); C08F 8/30 (2006.01);
U.S. Cl.
CPC ...
C08F 257/02 (2013.01); C08F 8/30 (2013.01);
Abstract

A method disclosed for making a side-chain dendrimer vesicle. The method includes the steps of: At first, there is provided a random copolymer with a narrow distribution of molecular weights by active polymerization and chemical modification. Then, chemical modification is executed to graft various generations of dendrimers to the random copolymer to provide a side-chain dendritic random copolymer with various generations. Two steps of emulsification are taken to induce macromolecular self-assembling of the side-chain dendritic random copolymer solution to form the macromolecular vesicle. The side-chain dendrimer includes C˜Chydrophobic alkyl chains.


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