The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Mar. 13, 2013
Globalfoundries Inc., Grand Cayman, KY;
Michael D. Wedlake, Albany, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
An approach for polishing-based hard mask removal during FinFET device formation is provided. In a typical embodiment, an initial device will be provided with a set of fins (e.g., silicon (Si)), a set of fin caps (e.g., silicon nitride (SiN)), and an oxide layer. A post-oxide planarizing and thinning polishing will first be performed (e.g., using a Silica-based slurry) to thin/reduce the oxide layer. A stop-on-nitride polishing will then be performed (e.g., using a Ceria-based slurry) to reduce the oxide layer to a top surface of the fin caps. Still yet, a stop-on-silicon polishing will be performed (e.g., using a Ceria-based slurry) to remove the set of fin caps and to reduce the oxide layer to a top surface to the set of fins.