The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Nov. 05, 2012
Applicant:
Korea Institute of Science and Technology, Seoul, KR;
Inventors:
Seung Kyu Ha, Seoul, KR;
Su Youn Kim, Seoul, KR;
Il Ki Han, Seoul, KR;
Jin Dong Song, Seoul, KR;
Won Jun Choi, Seoul, KR;
Assignee:
Korea Institute of Science and Technology, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 29/12 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01); G01N 21/00 (2006.01); H01L 29/76 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/02104 (2013.01); H01L 21/02601 (2013.01); H01L 21/02546 (2013.01); H01L 29/127 (2013.01); B82Y 10/00 (2013.01); H01L 29/0665 (2013.01); H01L 21/02631 (2013.01); G01N 21/00 (2013.01); H01L 29/7613 (2013.01); B82Y 40/00 (2013.01); Y10S 977/84 (2013.01);
Abstract
Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask.