The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Jul. 24, 2009
Applicants:

Brian Argo, Hortonville, WI (US);

Ruxandra Vidu, Citrus Heights, CA (US);

Pieter Stroeve, Davis, CA (US);

John Argo, West Sacramento, CA (US);

Saif Islam, Davis, CA (US);

Jie-ren Ku, Davis, CA (US);

Michael Chen, Cupertino, CA (US);

Inventors:

Brian Argo, Hortonville, WI (US);

Ruxandra Vidu, Citrus Heights, CA (US);

Pieter Stroeve, Davis, CA (US);

John Argo, West Sacramento, CA (US);

Saif Islam, Davis, CA (US);

Jie-Ren Ku, Davis, CA (US);

Michael Chen, Cupertino, CA (US);

Assignees:

Q1 Nanosystems, Inc, Sacramento, CA (US);

The Regents of the University of California, Oakland, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0296 (2006.01); H01L 31/18 (2006.01); H01L 31/0352 (2006.01); H01L 31/052 (2014.01); B82Y 40/00 (2011.01); B82Y 10/00 (2011.01); H01L 31/068 (2012.01); B82Y 30/00 (2011.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/035227 (2013.01); H01L 31/0522 (2013.01); B82Y 40/00 (2013.01); B82Y 10/00 (2013.01); Y02E 10/547 (2013.01); Y10S 977/762 (2013.01); H01L 31/0352 (2013.01); H01L 31/068 (2013.01); B82Y 30/00 (2013.01); Y10S 977/948 (2013.01); H01L 31/18 (2013.01); Y10S 977/891 (2013.01); H01L 31/02167 (2013.01); H01L 31/0527 (2013.01); Y02E 10/52 (2013.01);
Abstract

A method for forming a nanostructure according to one embodiment includes creating a hole in an insulating layer positioned over an electrically conductive layer; and forming a nanocable in the hole such that the nanocable extends through the hole in the insulating layer and protrudes therefrom, the nanocable being in communication with the electrically conductive layer. Additional systems and methods are also presented.


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