The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Apr. 24, 2013
Applicant:

Industrial Technology Research Institute, Chutung, Hsinchu, TW;

Inventors:

Teng-Yu Wang, Taipei, TW;

Chien-Hsun Chen, Tainan, TW;

Chen-Hsun Du, Taipei, TW;

Chung-Yuan Kung, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/30 (2006.01); H01L 31/18 (2006.01); H01L 21/20 (2006.01); H01L 31/0236 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 21/20 (2013.01); H01L 31/02363 (2013.01); H01L 31/068 (2013.01); Y02E 10/52 (2013.01); Y02E 10/547 (2013.01);
Abstract

The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process or a low temperature process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.


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