The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Feb. 05, 2010
Ray-hua Horng, Taichung, TW;
Dong-sing Wuu, Taichung, TW;
Shao-hua Huang, Taoyuan County, TW;
Chuang-yu Hsieh, Taipei County, TW;
Chao-kun Lin, San Jose, CA (US);
Ray-Hua Horng, Taichung, TW;
Dong-Sing Wuu, Taichung, TW;
Shao-Hua Huang, Taoyuan County, TW;
Chuang-Yu Hsieh, Taipei County, TW;
Chao-Kun Lin, San Jose, CA (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.