The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Mar. 01, 2011
Applicants:

Kosei Ueno, Hokkaido, JP;

Hiroaki Misawa, Hokkaido, JP;

Inventors:

Kosei Ueno, Hokkaido, JP;

Hiroaki Misawa, Hokkaido, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/027 (2006.01); G03F 1/50 (2012.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); G03F 7/7035 (2013.01); G03F 7/70375 (2013.01); G03F 7/70408 (2013.01); G03F 1/50 (2013.01); G03F 7/2014 (2013.01);
Abstract

Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.


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