The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
May. 15, 2006
Applicants:
Satoru Wakamatsu, Shunan, JP;
Hiroyuki Oda, Shunan, JP;
Inventors:
Satoru Wakamatsu, Shunan, JP;
Hiroyuki Oda, Shunan, JP;
Assignee:
Tokuyama Corporation, Shunan-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/03 (2006.01); C01B 33/107 (2006.01); H01L 31/18 (2006.01); C01B 33/035 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); C01B 33/10773 (2013.01); Y02E 10/547 (2013.01); C01B 33/03 (2013.01); C01B 33/035 (2013.01);
Abstract
There is provided a silicon production method which comprises producing semiconductor grade silicon while producing solar grade silicon by converting a portion of trichlorosilane into silicon for solar cells. There is also provided an industrially advantageous method that removes contaminants from a chlorosilane circulating system which produces trichlorosilane in producing silicon from trichlorosilane by a vapor deposition method.