The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Aug. 22, 2011
Marcus Schaefer, Traunstein, DE;
Oliver Kraetzschmar, Burgkirchen, DE;
Marcus Schaefer, Traunstein, DE;
Oliver Kraetzschmar, Burgkirchen, DE;
Wacker Chemie AG, Munich, DE;
Abstract
The invention provides a process for producing polycrystalline silicon, including introduction of a reaction gas containing a silicon-containing component and hydrogen by means of one or more nozzles into a reactor including at least one heated filament rod on which silicon is deposited, wherein an Archimedes number Arwhich describes flow conditions in the reactor, as a function of the fill level FL which states the ratio of one rod volume to one empty reactor volume in percent, for a fill level FL of up to 5% is within the range limited at the lower end by the function Ar=2000×FLand at the upper end by the function Ar=17 000×FL, and at a fill level of greater than 5% is within a range from at least 750 to at most 4000.