The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Sep. 18, 2009
Applicants:

Shoji Kawahito, Hamamatsu, JP;

Isamu Takai, Aichi-gun, JP;

Michinori Ando, Aichi-gun, JP;

Inventors:

Shoji Kawahito, Hamamatsu, JP;

Isamu Takai, Aichi-gun, JP;

Michinori Ando, Aichi-gun, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/06 (2006.01); H04N 5/378 (2011.01); H04N 5/374 (2011.01); H04N 5/355 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 5/378 (2013.01); H04N 5/374 (2013.01); H04N 5/35518 (2013.01); H01L 27/14609 (2013.01); H01L 27/14603 (2013.01); H01L 27/14643 (2013.01);
Abstract

At least one cell implementing a sensor array embraces a photoelectric-conversion accumulation element configured to generate and accumulate signal charges, a potential detection circuit configured to detect the signal charges generated by the photoelectric-conversion accumulation element as a potential change, and an amplification circuit configured to amplify the potential change and to transmit to an output-signal line. The photoelectric-conversion accumulation element and the potential detection circuit are connected in series between a first potential terminal and a second potential terminal, and the potential detection circuit has an insulated-gate transistor, which detects the potential change in a weak inversion state, in a period when an optical-communication signal is received.


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