The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Dec. 19, 2012
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Chang Yong Ahn, Icheon-si, KR;
Ho Seok Em, Icheon-si, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 29/50 (2006.01); G11C 11/21 (2006.01); G11C 11/22 (2006.01); G11C 13/00 (2006.01); G11C 16/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50 (2013.01); G11C 11/21 (2013.01); G11C 29/50008 (2013.01); G11C 11/22 (2013.01); G11C 13/00 (2013.01); G11C 16/00 (2013.01); G11C 2029/5006 (2013.01);
Abstract
A method for measuring a write current of a semiconductor memory device includes the steps of: programming initial data into memory cells which are to be programmed substantially at the same time; determining whether the memory cells are programmed into the same state or not; inputting test data when the memory cells are programmed into the same state; setting write current paths of the memory cells by comparing the initial data and the test data; and measuring a write current consumed when the test data are programmed into the memory cells.