The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Mar. 23, 2012
Applicants:

Boyoung Seo, Suwon-si, KR;

Yongkyu Lee, Gwacheon-si, KR;

Hyucksoo Yang, Seoul, KR;

Yongtae Kim, Yongin-si, KR;

Byungsup Shim, Yongin-si, KR;

Inventors:

Boyoung Seo, Suwon-si, KR;

Yongkyu Lee, Gwacheon-si, KR;

Hyucksoo Yang, Seoul, KR;

Yongtae Kim, Yongin-si, KR;

Byungsup Shim, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 27/115 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0425 (2013.01); H01L 29/42328 (2013.01); H01L 29/7881 (2013.01); H01L 27/11546 (2013.01); H01L 21/28273 (2013.01);
Abstract

Nonvolatile memory devices can include a floating gate on a substrate, with a first tunnel insulating film therebetween. A memory gate can be on the floating gate, with a blocking insulating film therebetween. A word line can be located at a first side of both the memory gate and the floating gate, with a second tunnel insulating film therebetween. The first side of the floating gate can protrude beyond the first side of the memory gate toward the word line.


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