The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Apr. 25, 2011
Takahiro Tsuji, Okayama, JP;
Takahiro Tsuji, Okayama, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
An object is to provide a measuring method with high reproducibility in a bias-temperature stress test of a transistor in which an oxide semiconductor is used for a semiconductor layer. Provided is a measuring method of a transistor, which includes the steps of disposing a transistor in which an oxide semiconductor is used for a semiconductor layer in a measurement room having a light-blocking property, introducing dry air, nitrogen, or argon into the measurement room, and applying a predetermined voltage to a gate electrode of the transistor in the measurement room kept under an atmosphere where the dew point is greater than or equal to −110° C. and less than or equal to −60° C., whereby the amount of change in threshold voltage over time is measured.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile