The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Jun. 22, 2012
Applicants:

Ying-bin Fu, Shenzhen, CN;

Yuan-xi Chen, Shenzhen, CN;

Ya-jun Pan, Shenzhen, CN;

Inventors:

Ying-Bin Fu, Shenzhen, CN;

Yuan-Xi Chen, Shenzhen, CN;

Ya-Jun Pan, Shenzhen, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/613 (2006.01); G05F 1/618 (2006.01);
U.S. Cl.
CPC ...
G05F 1/618 (2013.01);
Abstract

A power adapter includes a processing circuit converting mains power to another alternating current (AC) power or a direct current (DC) power, a first output outputting the converted AC or DC power, a sense resistor connected between the processing circuit and the first output for sampling current flowing through the first output and converting the sampled current to a sampled voltage, an amplifying circuit connected to the sense resistor for amplifying the sampled voltage, and a metallic oxide semiconductor field effect transistor (MOSFET). A gate of the MOSFET is connected to the amplifying circuit. A drain of the MOSFET is connected to the first output through a first resistor and grounded through a second resistor. A source of the MOSFET is grounded. A node between the first and second resistors is connected to the processing circuit. The amplifying circuit makes the MOSFET work in a variable resistance region.


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