The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Sep. 17, 2013
Applicant:
Fujitsu Semiconductor Limited, Yokohama, JP;
Inventor:
Naoyuki Watanabe, Yokohama, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/00 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54453 (2013.01); H01L 21/78 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming at least one stripe-shaped protection film over a multilayer film in a scribe region of a semiconductor substrate having a plurality of semiconductor element regions formed therein, the protection film having a thickness larger in a center portion thereof than at an end surface thereof and being made of a member which transmits a laser beam, and removing the multilayer film in the scribe region by irradiating the protection film with a laser beam.