The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Mar. 25, 2010
Applicants:
Toshiaki Ono, Tokyo, JP;
Wataru Ito, Tokyo, JP;
Jun Fujise, Tokyo, JP;
Inventors:
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/06 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); C30B 33/02 (2006.01); H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3225 (2013.01); C30B 29/06 (2013.01); H01L 21/67115 (2013.01); H01L 21/68735 (2013.01); C30B 33/02 (2013.01); Y10S 438/918 (2013.01);
Abstract
A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process.