The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Oct. 11, 2011
Applicants:

Xiangdong Chen, Irvine, CA (US);

Henry Kuo-shun Chen, Irvine, CA (US);

Inventors:

Xiangdong Chen, Irvine, CA (US);

Henry Kuo-Shun Chen, Irvine, CA (US);

Assignee:

Broadcom Corporation, Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/522 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/86 (2013.01); H01L 23/5223 (2013.01); H01L 27/0629 (2013.01);
Abstract

According to one exemplary embodiment, a metal-oxide-metal (MOM) capacitor in a semiconductor die comprises a first plurality of capacitor plates and a second plurality of capacitor plates sharing a plane parallel to and below a plane of a first metallization layer of the semiconductor die. The MOM capacitor further comprises a local interlayer dielectric between the first plurality of capacitor plates and the second plurality of capacitor plates. The first and second plurality of capacitor plates are made from a local interconnect metal for connecting devices formed in a device layer of the semiconductor die situated below the first metallization layer.


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