The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Oct. 25, 2012
Applicant:
Hitachi, Ltd., Tokyo, JP;
Inventors:
Norifumi Kameshiro, Tokyo, JP;
Natsuki Yokoyama, Mitaka, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
Abstract
Reliability of a semiconductor device is improved by suppressing reverse voltage deterioration at the time of reverse bias junction barrier Schottky diode using a substrate containing SiC. In a JBS diode having an active area of 0.1 cmor more, an area of a Schottky interface at which a drift layer and a Schottky electrode are contacted can be sufficiently reduced by relatively increasing a ratio of p-type semiconductor region being a junction barrier region in an active region, and thereby deterioration in reverse voltage caused by defects existing in the drift layer is prevented.