The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Aug. 10, 2011
Applicant:

Michael Tkachuk, Sayville, NY (US);

Inventor:

Michael Tkachuk, Sayville, NY (US);

Assignee:

BAH Holdings LLC, Glen Cove, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01);
Abstract

A photodetector is provided, comprising: a radiation-absorbing semiconductor region and a collection semiconductor region separated by and each in contact with a barrier semiconductor region; wherein, at least in the absence of an applied bias voltage, the band gap between the valence band energy and the conduction band energy of the barrier semiconductor region is offset from the band gap between the valence band energy and the conduction band energy of the radiation-absorbing semiconductor region so as to form an energy barrier between the radiation-absorbing semiconductor region and the collection semiconductor region which resists the flow of minority carriers from the radiation-absorbing semiconductor region to the collection semiconductor region. Also provided is a method of manufacturing a photodetector.


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