The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Dec. 13, 2010
Turgut Tut, Cambridge, MA (US);
Peter Duane, Waltham, MA (US);
Young-june Yu, Cranbury, NJ (US);
Winnie N. YE, Ottawa, CA;
Munib Wober, Topsfield, MA (US);
Kenneth B. Crozier, Cambridge, AU;
Turgut Tut, Cambridge, MA (US);
Peter Duane, Waltham, MA (US);
Young-June Yu, Cranbury, NJ (US);
Winnie N. Ye, Ottawa, CA;
Munib Wober, Topsfield, MA (US);
Kenneth B. Crozier, Cambridge, AU;
Zena Technologies, Inc., Cambridge, MA (US);
President and Fellows of Harvard College, Cambridge, MA (US);
Abstract
Various embodiments for etching of silicon nitride (SiN) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.