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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8890243 B1

PDFFull Text
Date of Patent:
Nov. 18, 2014

Filed:

Nov. 27, 2012

Semiconductor device

Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventor:

Shinichiro Yanagi, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, JP;

Attorney:

Miles & Stockbridge P.C.

Primary Examiner:

Theresa T Doan

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/761 (2006.01); H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/1087 (2013.01); H01L 29/0847 (2013.01); H01L 29/0653 (2013.01); H01L 29/66659 (2013.01); H01L 29/4238 (2013.01); H01L 29/1083 (2013.01); H01L 21/761 (2013.01); H01L 29/7835 (2013.01); H01L 27/088 (2013.01); H01L 21/823418 (2013.01); H01L 29/0692 (2013.01);
Abstract

In the interior of a semiconductor substrate having a main surface, a first pepitaxial region is formed, a second pepitaxial region is formed on the main surface side, and an n-type drift region and a p-type body region are formed on the main surface side. An nburied region is formed between the first pepitaxial region and the second pepitaxial region in order to electrically isolate the regions. A pburied region having a p-type impurity concentration higher than that of the second pepitaxial region is formed between the nburied region and the second pepitaxial region. The pburied region is located at least immediately under the junction between the n-type drift region and the p-type body region so as to avoid a site immediately under a drain region which is in contact with the n-type drift region.

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