The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Sep. 05, 2012
Applicant:
Ryuji Ohba, Kawasaki, JP;
Inventor:
Ryuji Ohba, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); H01L 27/11519 (2013.01); H01L 27/0207 (2013.01); H01L 29/66833 (2013.01); H01L 21/28273 (2013.01); H01L 27/11521 (2013.01);
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a first memory cell on the first fin-type active area, and a second memory cell on the second fin-type active area. Each of widths of charge storage layers of the first and second memory cells becomes narrower upward from below. Each of inter-electrode insulating layers of the first and second memory cells has a contact portion through which both are in contact with each other.