The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Apr. 23, 2013
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Atsushi Yamada, Osaka, JP;

Akira Inoue, Osaka, JP;

Toshiya Yokogawa, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/16 (2013.01); H01L 33/20 (2013.01); H01L 33/0075 (2013.01);
Abstract

A nitride-based semiconductor light-emitting element disclosed in the present application includes: an active layer having a growing plane which is an m-plane and which is made of a GaN-based semiconductor; and at least one radiation surface at which light from the active layer is to be radiated. The radiation surface has a plurality of protrusions on the m-plane. A base of each of the plurality of protrusions is a region inside a closed curve, and a shape of the base has a major axis and a minor axis. An angle between the major axis and an extending direction of an a-axis of a crystal is not more than 45°.


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