The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Mar. 09, 2012
Hong-tsz Pan, Cupertino, CA (US);
Qi Lin, Cupertino, CA (US);
Yun Wu, San Jose, CA (US);
Bang-thu Nguyen, Santa Clara, CA (US);
Hong-Tsz Pan, Cupertino, CA (US);
Qi Lin, Cupertino, CA (US);
Yun Wu, San Jose, CA (US);
Bang-Thu Nguyen, Santa Clara, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
A metal oxide semiconductor field effect transistor (MOSFET) for an integrated circuit includes a substrate of a first conductivity type, a first well region of a second conductivity type located in the substrate, and a second well region of the second conductivity type located within the substrate. The second well region is functionally connected to the first well region, and the second well region has a surface area greater than a surface area of the first well region. The MOSFET further includes a source of the first conductivity type located in the first well region, a drain of the first conductivity type located in the first well region, a substrate terminal of the second conductivity type located in the first well region, a gate oxide on a top surface of the first well region, and a gate electrode located on a top surface of the gate oxide.