The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Jun. 04, 2012
Applicants:
Nikolay Ledentsov, Berlin, DE;
James Lott, Berlin, DE;
Vitaly Shchukin, Berlin, DE;
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/26 (2010.01); H01L 33/30 (2010.01); H01L 33/06 (2010.01); H01L 33/04 (2010.01); H01S 5/34 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 33/26 (2013.01); H01S 5/3407 (2013.01); H01S 5/3403 (2013.01); Y10S 977/773 (2013.01); H01L 33/305 (2013.01); H01L 33/06 (2013.01); H01S 5/3422 (2013.01); H01L 33/0062 (2013.01); Y10S 977/762 (2013.01);
Abstract
A light-emitting device epitaxially-grown on a GaAs substrate which contains an active region composed of AlGaAs alloy or of related superlattices of this materials system is disclosed. This active region either includes tensile-strained GaP-rich insertions aimed to increase the forbidden gap of the active region targeting the bright red, orange, yellow, or green spectral ranges, or is confined by regions with GaP-rich insertions aimed to increase the barrier height for electrons in the conduction band preventing the leakage of the nonequilibrium carriers outside of the light-generation region.