The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Jun. 10, 2010
Applicants:

Haruhiro Funakoshi, Hamamatsu, JP;

Shinya Ito, Hamamatsu, JP;

Inventors:

Haruhiro Funakoshi, Hamamatsu, JP;

Shinya Ito, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 40/14 (2006.01); G01J 1/46 (2006.01); H03F 3/00 (2006.01); H03F 3/45 (2006.01); H03F 3/08 (2006.01);
U.S. Cl.
CPC ...
G01J 1/46 (2013.01); H03F 3/005 (2013.01); H03F 3/45 (2013.01); H03F 3/08 (2013.01);
Abstract

A photodetecting deviceincludes a photodiode PD and an integrating circuit. The integrating circuitincludes an amplifier circuit, a capacitive element C, a first switch SW, and a second switch SW. The second switch SWis provided between a reference potential input terminal to which a reference potential Vref is input and a terminal of the capacitive element C on the inverting input terminal side of the amplifier circuit, and the second switch is opened or closed according to the level of a second reset signal Reset, and is capable of applying the reference potential Vref to the terminal of the capacitive element. Thus, an integrating circuit and a photodetecting device capable of achieving both low power consumption and high speed can be realized.


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