The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Mar. 06, 2007
Fumitsugu Fukuyo, Hamamatsu, JP;
Etsuji Ohmura, Hirakata, JP;
Kenshi Fukumitsu, Hamamatsu, JP;
Masayoshi Kumagai, Hamamatsu, JP;
Kazuhiro Atsumi, Hamamatsu, JP;
Naoki Uchiyama, Hamamatsu, JP;
Fumitsugu Fukuyo, Hamamatsu, JP;
Etsuji Ohmura, Hirakata, JP;
Kenshi Fukumitsu, Hamamatsu, JP;
Masayoshi Kumagai, Hamamatsu, JP;
Kazuhiro Atsumi, Hamamatsu, JP;
Naoki Uchiyama, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
An object to be processedis irradiated with laser light L with a standard pulse waveform, so as to form a molten processed region, which has a larger size in the thickness direction of the objectand is easy to generate a fracturein the thickness direction of the object, within a silicon wafer, and with laser light L with a retarded pulse waveform, so as to form a molten processed region, which has a smaller size in the thickness direction of the objectand is hard to generate the fracturein the thickness direction of the object, within a silicon wafer.