The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Mar. 20, 2012
Doo-youl Lee, Yongin-si, KR;
Young-jin Kim, Yongin-si, KR;
Dong-seop Kim, Yongin-si, KR;
Chan-bin MO, Yongin-si, KR;
Young-su Kim, Yongin-si, KR;
Young-sang Park, Yongin-si, KR;
Doo-Youl Lee, Yongin-si, KR;
Young-Jin Kim, Yongin-si, KR;
Dong-Seop Kim, Yongin-si, KR;
Chan-Bin Mo, Yongin-si, KR;
Young-Su Kim, Yongin-si, KR;
Young-Sang Park, Yongin-si, KR;
Samsung SDI Co., Ltd., Yongin-Si, Gyeonggi-Do, KR;
Abstract
A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.