logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8889515 B1

PDFFull Text
Date of Patent:
Nov. 18, 2014

Filed:

Dec. 27, 2011

Method for fabricating semiconductor device by changing work function of gate metal layer

Applicants:

Yun-hyuck Ji, Gyeonggi-do, KR;

Woo-young Park, Gyeonggi-do, KR;

Inventors:

Yun-Hyuck Ji, Gyeonggi-do, KR;

Woo-Young Park, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:

IP & T Group LLP

Primary Examiner:

Michael Jung

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/28 (2006.01); H01L 21/265 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 21/70 (2006.01); H01L 27/088 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01L 29/513 (2013.01); H01L 21/28088 (2013.01); H01L 29/4966 (2013.01); H01L 29/78 (2013.01); H01L 21/823842 (2013.01);
Abstract

A semiconductor device includes a substrate including a first region and a second region, a gate dielectric layer formed on the substrate, and a metal electrode layer formed on the gate dielectric layer and including a compound of carbon and nitrogen, wherein a metal electrode formed from the metal electrode layer in the first region has a work function lower than a work function of a metal electrode formed from the metal electrode layer in the second region and a nitrogen concentration of the metal electrode of the first region is smaller than a nitrogen concentration of the metal electrode of the second region.

Find Patent Forward Citations

Loading…