The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Nov. 18, 2011
Takumi Mikawa, Shiga, JP;
Yukio Hayakawa, Kyoto, JP;
Yoshio Kawashima, Osaka, JP;
Takeki Ninomiya, Osaka, JP;
Takumi Mikawa, Shiga, JP;
Yukio Hayakawa, Kyoto, JP;
Yoshio Kawashima, Osaka, JP;
Takeki Ninomiya, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
Provided is a method for manufacturing a variable resistance nonvolatile semiconductor memory element, and a nonvolatile semiconductor memory element which make it possible to operate at a low voltage and high speed when initial breakdown is caused, and exhibit favorable diode element characteristics. The method for manufacturing the nonvolatile semiconductor memory element includes, after forming a top electrode of a variable resistance element and at least before forming a top electrode of an MSM diode element, oxidizing to insulate a portion of a variable resistance film in a region around an end face of a variable resistance layer.