The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

May. 09, 2013
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Mann Yi, Seoul, KR;

Jeonghyo Kwon, Seoul, KR;

Seongeun Lee, Seoul, KR;

Taeyoung Kwon, Seoul, KR;

Assignee:

LG Electronics Inc., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0232 (2014.01); H01L 31/0236 (2006.01); H01L 21/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0236 (2013.01); H01L 21/02054 (2013.01); H01L 31/02363 (2013.01); H01L 31/02168 (2013.01); Y02E 10/547 (2013.01); H01L 31/068 (2013.01); Y02E 10/52 (2013.01); H01L 31/02167 (2013.01);
Abstract

A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.


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