The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Jul. 16, 2012
Kenji Hiratsuka, Yokohama, JP;
Kenji Hiratsuka, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A method for manufacturing a semiconductor optical device includes the steps of growing a stacked semiconductor layer on a substrate having a cleavage direction in a first direction; forming a first mask having a plurality of openings arranged in the first direction; forming a mark array by etching the stacked semiconductor layer using the first mask; forming a second mask having first and second openings extending in a second direction intersecting the first direction; obtaining a substrate product by forming first and second grooves, and a waveguide mesa by etching the stacked semiconductor layer by using the second mask; and producing a laser diode bar by cleaving the substrate product including the waveguide mesa. First and second residual marks are formed on the upper surface of the waveguide mesa. First and second transfer marks are formed on the bottoms of the first and the second grooves, respectively.