The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Oct. 27, 2010
Applicants:

Toshiaki Takai, Yokohama, JP;

Yukio Sakigawa, Fujisawa, JP;

Inventors:

Toshiaki Takai, Yokohama, JP;

Yukio Sakigawa, Fujisawa, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 31/18 (2006.01); H01L 33/48 (2010.01); H01L 21/50 (2006.01); H01L 27/146 (2006.01); H01L 23/10 (2006.01); H01L 33/00 (2010.01); H01S 5/42 (2006.01); H01L 23/00 (2006.01); H01S 5/022 (2006.01);
U.S. Cl.
CPC ...
H01L 23/10 (2013.01); H01L 2224/83121 (2013.01); H04L 2224/29082 (2013.01); H01L 2224/32237 (2013.01); H01L 2224/05155 (2013.01); H01L 2924/3656 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/05644 (2013.01); H01L 21/50 (2013.01); H01L 2224/8381 (2013.01); H01L 2224/293 (2013.01); H01L 2224/8321 (2013.01); H01L 2224/2919 (2013.01); H01L 2924/09701 (2013.01); H01L 33/0079 (2013.01); H01L 2924/3511 (2013.01); H01S 5/423 (2013.01); H01L 2224/291 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/2745 (2013.01); H01L 24/05 (2013.01); H01L 2224/83192 (2013.01); H01L 24/27 (2013.01); H01L 2224/83011 (2013.01); H01L 24/83 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/2732 (2013.01); H01L 2224/83815 (2013.01); H01L 2224/29355 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/3651 (2013.01); H01S 5/02208 (2013.01); H01S 5/02272 (2013.01); H01L 24/29 (2013.01); H01L 2224/04026 (2013.01); H01S 5/02296 (2013.01); H01L 2224/29324 (2013.01); H01L 2224/29294 (2013.01); H01L 27/14618 (2013.01); H01L 2224/83444 (2013.01); H01L 2924/15159 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/29363 (2013.01); H01L 2224/29366 (2013.01);
Abstract

The invention provides a wafer-bonded semiconductor device wherein warpage generated when wafers are bonded is reduced at a low cost ad through a simple process. In a method for manufacturing a wafer-bonded semiconductor device by bonding a first wafer substrate and a second wafer substrate together, the method of the invention includes a first step of forming in advance bonding members having a bonding function when heated on the wafer-bonded surface sides of the first wafer substrate and the second wafer substrate, respectively; a second step of supplying flux paste containing two or more kinds of powdery materials having reactivity to the surfaces of the bonding members formed in the first step; and a third step of causing excitation to have the flux paste supplied in the second step start reacting.


Find Patent Forward Citations

Loading…