The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Mar. 06, 2006
Maxim Kelman, Mountain View, CA (US);
Krishnan Shrinivasan, San Jose, CA (US);
Feng Wang, Fremont, CA (US);
Victor LU, Foster City, CA (US);
Sean Chang, Sunnyvale, CA (US);
Guangquan LU, Fremont, CA (US);
Maxim Kelman, Mountain View, CA (US);
Krishnan Shrinivasan, San Jose, CA (US);
Feng Wang, Fremont, CA (US);
Victor Lu, Foster City, CA (US);
Sean Chang, Sunnyvale, CA (US);
Guangquan Lu, Fremont, CA (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multi-step ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated at each step. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first step to facilitate removal of the porogen and create a porous dielectric film. In a second step, the film is exposed to UV radiation to increase crosslinking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.