The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Sep. 17, 2008
Andreas Kienzle, Balgheim-Möttingen, DE;
Johann Daimer, Mörfelden-Walldorf, DE;
Rudi Beck, Mönchsdeggingen, DE;
Otto Mederle, Meitingen, DE;
Andreas Kienzle, Balgheim-Möttingen, DE;
Johann Daimer, Mörfelden-Walldorf, DE;
Rudi Beck, Mönchsdeggingen, DE;
Otto Mederle, Meitingen, DE;
Audi AG, Ingolstadt, DE;
Abstract
Method for treatment of workpieces of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the following steps: preheating of porous carbon workpieces under an inert gas to a selected operating temperature T, delivery of liquid silicon to the porous carbon workpieces at an operating pressure pand an operating temperature Tand impregnation of the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature Twith formation of silicon carbide from carbon and silicon, gassing of the workpieces with inert gas, and cooling from the operating temperature Tto a conditioning temperature T, cooling of workpieces to room temperature, in step c the delivery of silicon and transport of the workpieces taking place over preferably cylindrical rolls which are porous at least in the exterior region and which are pivoted, and their speed of rotation determining the residence time for the delivery of silicon in step c, and the temperature Tbeing greater than or equal to the temperature T, and the workpieces for process step d no longer being in contact with liquid silicon outside the workpieces.