The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Jan. 02, 2014
Applicants:

Fujifilm Corporation, Tokyo, JP;

Fujifilm Electronic Materials U.s.a., Inc., North Kingstown, RI (US);

Inventors:

Tomonori Takahashi, Mesa, AZ (US);

Tadashi Inaba, Shizuoka, JP;

Atsushi Mizutani, Shizuoka, JP;

Bing Du, Gilbert, AZ (US);

William A. Wojtczak, Austin, TX (US);

Kazutaka Takahashi, Shizuoka, JP;

Tetsuya Kamimura, Shizuoka, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); H01L 21/3213 (2006.01); C09K 13/06 (2006.01); C23F 1/16 (2006.01); C23F 1/30 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C09K 13/06 (2013.01); C23F 1/16 (2013.01); C23F 1/30 (2013.01); H01L 21/28518 (2013.01); H01L 21/76843 (2013.01);
Abstract

This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.


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