The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Apr. 27, 2012
Applicants:
Ching-fuh Lin, Taipei, TW;
Shih-che Hung, Taipei, TW;
Shu-jia Syu, Taipei, TW;
Inventors:
Assignee:
National Taiwan University, Taipei, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); G02B 6/136 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); H01L 21/02381 (2013.01); H01L 21/02675 (2013.01); H01L 21/02532 (2013.01); G02B 2006/12061 (2013.01);
Abstract
The present invention relates to a method for producing silicon waveguides on non-SOI substrate (non-silicon-on-insulator substrate), and particularly relates to a method for producing silicon waveguides on silicon substrate with a laser. This method includes the following steps: (1) forming a ridge structure with high aspect ratio on a non-SOI substrate; (2) melting and reshaping the ridge structure by laser illumination for forming a structure having broad upper part and narrow lower part; and (3) oxidizing the structure having broad upper part and narrow lower part to form a silicon waveguide.