The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Jun. 18, 2012
Applicant:

Jintang Shang, Jiangsu, CN;

Inventor:

Jintang Shang, Jiangsu, CN;

Assignee:

Southeast University, Jiangsu, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03B 19/08 (2006.01); B81B 7/02 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
C03B 19/08 (2013.01); B81B 7/0051 (2013.01);
Abstract

A foaming process for preparing wafer-level glass micro-cavities that include, etching silicon trenches on a Si wafer through Si micro-machining process; placing high-temperature outgassing agent in the silicon trenches; bonding the Si wafer with a piece of glass wafer by anodic bonding to form sealing cavities; heating up the bonded wafer, and holding the temperature the high-temperature outgassing agent such that the molten glass corresponding to the sealing cavities deforms and structures corresponding to the silicon trenches are formed in the glass; cooling down to obtain wafer-level glass micro-flow channels.


Find Patent Forward Citations

Shang, Jintang. (2014). Foaming process for preparing wafer-level glass micro-cavities (U.S. Patent No. 8887527). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8887527

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…