The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Sep. 17, 2013
Applicant:

Analog Devices Technology, Hamilton, BM;

Inventors:

Roger Feng, Shanghai, CN;

Junxiao Chen, Shanghai, CN;

Bin Shao, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5081 (2013.01);
Abstract

A method can reuse at least one pin in demultiplexing (demuxing) a voltage from a pin. The method can be used to set an accurate current limit threshold in a design for test (DFT) phase and, thus, to accurately set a trimming code of a current limiter. The method uses the property that a power MOSFET has almost a same conductive resistance at a large drain current. Thus, the current limit threshold can be set according to an accurate drain-to-source voltage Vat a small current sink that is less than a maximum current that ATE is able to provide. An accurate voltage Vcan be measured through Kelvin sensing drain and source pins of the power MOSFET, which are connected to a current sense circuit.


Find Patent Forward Citations

Loading…