The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Sep. 06, 2007
Applicant:

Carlos J. R. P. Augusto, San Jose, CA (US);

Inventor:

Carlos J. R. P. Augusto, San Jose, CA (US);

Assignee:

Quantum Semiconductor LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01L 27/146 (2006.01); G02B 6/43 (2006.01); H01L 31/0232 (2014.01); G02B 6/08 (2006.01); G02B 6/42 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12 (2013.01); G02B 6/43 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H01L 31/0232 (2013.01); H01L 27/14629 (2013.01); G02B 6/08 (2013.01); H01L 27/14621 (2013.01); G02B 6/4298 (2013.01); G02B 6/4249 (2013.01);
Abstract

Photonic passive structure to couple and guide light between photonic active devices (), such as photo-diodes, light emitting devices and light-valves, which may be arranged into 2D arrays, and the top of the metallization layer stack () interconnecting said devices, with said photonic passive structure comprising a hole () between the near surface of said photonic active Ndevices and the top of said metallization stack, said hole being filled with a dielectric () having embedded metal films () and in which the embedded metal thin films are connected to a planar perforated metal film () formed on top of the metallization stack.


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