The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Mar. 19, 2012
Applicants:

Takaya Yamanaka, Mie-ken, JP;

Susumu Shuto, Kanagawa-ken, JP;

Inventors:

Takaya Yamanaka, Mie-ken, JP;

Susumu Shuto, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/16 (2013.01); H01L 43/08 (2013.01); H01L 27/228 (2013.01); Y10S 977/933 (2013.01); Y10S 977/935 (2013.01);
Abstract

According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a memory region; and a conductive region. The transistor controls a conduction of each of a current in a first direction flowing between the first line and the second line and a current in a second direction opposite to the first direction. The memory region has a first magnetic tunnel junction element which is connected between the first line and one end of the transistor, a magnetization direction of which becomes parallel when a current not less than a first parallel threshold value flows in the first direction, and the magnetization direction of which becomes antiparallel when a current not less than a first antiparallel threshold value flows in the second direction. The conductive region is connected between the second line and the other end of the transistor.


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