The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Feb. 11, 2013
Applicant:

Crocus Technology SA, Grenoble Cedex, FR;

Inventors:

Jeremy Alvarez-Herault, Grenoble, FR;

Yann Conraux, Grenoble, FR;

Lucien Lombard, Grenoble, FR;

Assignee:

CROCUS Technology SA, Grenoble Cedex, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 15/02 (2006.01); G11C 15/04 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 15/02 (2013.01); G11C 15/046 (2013.01); G11C 11/16 (2013.01); G11C 2211/5615 (2013.01);
Abstract

The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell.


Find Patent Forward Citations

Loading…