The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Mar. 28, 2012
Applicants:

Shinya Niioka, Kanagawa, JP;

Koji Shigemura, Kanagawa, JP;

Inventors:

Shinya Niioka, Kanagawa, JP;

Koji Shigemura, Kanagawa, JP;

Assignee:

NLT Technologies, Ltd., Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/038 (2013.01); G09G 3/36 (2006.01); G09G 3/00 (2006.01); H04N 13/04 (2006.01); G02F 1/1362 (2006.01); G02B 27/22 (2006.01);
U.S. Cl.
CPC ...
G06F 3/038 (2013.01); H04N 13/0404 (2013.01); G09G 2300/0465 (2013.01); G09G 3/3648 (2013.01); G02F 1/136213 (2013.01); G09G 3/003 (2013.01); G02B 27/2214 (2013.01); G02F 1/1362 (2013.01);
Abstract

A subpixel is provided with a pixel electrodePIX, a pixel thin-film transistorTFT, and a charging capacitor electrode CS. The charging capacitor electrode CSis formed in the same layer as a charging capacitor line CS and electrically connected to the charging capacitor line CS. A charging capacitorCS is mainly formed between the charging capacitor electrode CSand an electrode constituted by a silicon layerSI via an insulating film. One of the source and drain electrodes of a pixel thin-film transistor TFT is connected to a data line D via a contact holeCONTand the other is connected to a pixel electrodePIX via a contact holeCONT


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