The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Aug. 09, 2012
Applicants:

Jae Hyun Kim, Daejeon, KR;

Sang Won Lee, Daejeon, KR;

Yong Gwan Lee, Daejeon, KR;

Inventors:

Jae Hyun Kim, Daejeon, KR;

Sang Won Lee, Daejeon, KR;

Yong Gwan Lee, Daejeon, KR;

Assignee:

Plasmart Inc., Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 19/78 (2006.01); H05H 1/46 (2006.01); H03H 7/40 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H05H 1/46 (2013.01); H03H 7/40 (2013.01); H05H 2001/4682 (2013.01); H01J 37/32183 (2013.01); H01J 37/32091 (2013.01);
Abstract

Provided is an impedance matching apparatus for matching impedance to a plasma load. The impedance matching apparatus includes a first frequency impedance matching circuit unit that transfers an output of a first frequency RF power source unit, operating at a first frequency, to the plasma load; and a second frequency impedance matching circuit unit that transfers an output of a second frequency RF power source unit, operating at a second frequency higher than the first frequency, to the plasma load. The first frequency impedance matching circuit unit includes a T-type matching circuit, and the second frequency impedance matching circuit unit includes a standard L-type matching circuit or Π-type matching circuit.


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