The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jul. 10, 2013
Advanced Power Device Research Association, Yokohama, JP;
Takuya Kokawa, Kanagawa, JP;
Tatsuyuki Shinagawa, Kanagawa, JP;
Masayuki Iwami, Kanagawa, JP;
Kazuyuki Umeno, Kanagawa, JP;
Sadahiro Kato, Kanagawa, JP;
Furukawa Electric Co., Ltd., Tokyo, KP;
Abstract
A nitride compound semiconductor device includes: a substrate; a buffer layer formed on the substrate and including a plurality of composite layers each layered of: a first layer formed of a nitride compound semiconductor; and a second layer formed of a nitride compound semiconductor containing aluminum and having a lattice constant smaller than a lattice constant of the first layer; a semiconductor operating layer formed on the buffer layer; and a plurality of electrodes formed on the semiconductor operating layer. At least one of the second layers has oxygen added therein.