The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Oct. 13, 2011
Applicant:

Atsushi Narazaki, Tokyo, JP;

Inventor:

Atsushi Narazaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H01L 21/66 (2006.01); G01R 31/28 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); G01R 31/2884 (2013.01); H01L 2224/48247 (2013.01); H01L 24/73 (2013.01); H01L 22/12 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/014 (2013.01); H01L 2924/13091 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/13055 (2013.01); H01L 23/3121 (2013.01); H01L 24/32 (2013.01);
Abstract

A semiconductor device includes a semiconductor chip with a gate electrode, and a stress detecting element placed on a surface of the semiconductor chip, and which detects stress applied to the surface. The semiconductor device controls a control signal to be applied to the gate electrode in response to stress detected by the stress detecting element. The stress detecting element is preferably provided as a first stress detecting element which detects stress applied to a central portion of the semiconductor chip in plan view. The stress detecting element is preferably provided as a second stress detecting element which detects stress applied to a circumferential portion of the semiconductor chip in plan view.


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