The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Nov. 15, 2010
Applicants:
Ankur Jain, Arcadia, CA (US);
Robert J. Calvet, Pasadena, CA (US);
Roman C. Gutierrez, Arcadia, CA (US);
Inventors:
Ankur Jain, Arcadia, CA (US);
Robert J. Calvet, Pasadena, CA (US);
Roman C. Gutierrez, Arcadia, CA (US);
Assignee:
DigitalOptics Corporation MEMS, Arcadia, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
A device may comprise a substrate formed of a first semiconductor material, a first trench formed in the substrate, a second trench formed in the substrate proximate the first trench, an oxide layer formed in the first trench and the second trench, and a second semiconductor material formed upon the oxide layer. The oxide layer in the second trench may be adapted to mitigate undercut of the oxide layer in the first trench during an etching process.