The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Sep. 16, 2013
Applicant:
Chengdu Haicun Ip Technology Llc, SiChuan, CN;
Inventor:
Guobiao Zhang, Corvallis, OR (US);
Assignees:
ChengDu HaiCun Technology LLC, ChengDu, SiChuan, CN;
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 49/02 (2006.01); G11C 17/10 (2006.01); H01L 27/112 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); G11C 17/10 (2013.01); H01L 27/112 (2013.01); H01L 29/868 (2013.01);
Abstract
A large bit-per-cell three-dimensional mask-programmable read-only memory (3D-MPROM) is disclosed. It can achieve large bit-per-cell (e.g. 4-bpc or more). 3D-MPROMcan be realized by adding resistive layer(s) or resistive element(s) to the memory cells.